| 栅控二极管正向R-G电流对SOI体陷阱特征和硅膜结构的依赖性 |
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| 引用本文： | 何进,黄如,张兴,孙飞,王阳元. 栅控二极管正向R-G电流对SOI体陷阱特征和硅膜结构的依赖性[J]. 半导体学报, 2001, 22(1) |
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| 作者姓名： | 何进 黄如 张兴 孙飞 王阳元 |
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| 作者单位： | 北京大学微电子学研究所 |
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| 基金项目： | 摩托罗拉和北京大学联合研究基金 |
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| 摘 要： | 使用半导体器件数值分析工具DESSISE-ISE，对侧向的P＋P－N＋栅控二极管的正向R-G电流对SOI体陷阱特征和硅膜结构的依赖性进行了详尽的研究．通过系统地改变硅膜体陷阱的密度和能级分布，得出了相应的P＋P－N＋栅控二极管的正向R-G电流的变化．同时，表征硅膜结构的参数如沟道掺杂和硅膜厚度的变化也使器件从部分耗尽向全耗尽方向转化，分析了这种转化对R-G电流大小和分布的影响．
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| 关 键 词： | R-G电流 体陷阱 陷阱密度和能级分布 SOI器件 栅控二极管 |
Dependence of R-G Current on Bulk Traps Characteristics and Silicon Film Structure in SOI Gated-Diode |
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| HE Jin,HUANG Ru,ZHANG Xing,SUN Fei,WANG Yang-Yuan. Dependence of R-G Current on Bulk Traps Characteristics and Silicon Film Structure in SOI Gated-Diode[J]. Chinese Journal of Semiconductors, 2001, 22(1) |
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| Authors: | HE Jin HUANG Ru ZHANG Xing SUN Fei WANG Yang-Yuan |
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| Abstract: | The dependence of the Recombination-Generation (R-G) current on the bulk trap characteristics and silicon film structure in SOI lateral p+p-n+ diode has been analyzed numerically by using the simulation tool,DESSIS-ISE.By varying the bulk trap characteristics such as the trap density and energy level spectrum systematically,the dependence of the R-G current on both of them has been demonstrated in details.Moreover,the silicon film doping concentration and thickness are changed to make silicon body varies from the fully-depletion mode into the partially-depletion one.The influence of the transfer of silicon body characteristics on the R-G current has also been carefully examined.A better understanding is obtained of the behavior of bulk trap R-G current in the SOI lateral gated-diode. |
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