GeSi Source/Drain Structure for Suppression of Short Channel Effect in SOI p-MOSFET's

GeSi source/drain structure is purposefully adopted in SOIp-MOSFET's to suppress the short channel effect (SCE).The impact of GeSi material (as source only,drain only or both source and drain) on the threshold voltage rolling-off and DIBL effect is thoroughly investigated,as well as the influence of the Ge concentration and silicon film thickness.The Ge concentration should be carefully chosen as a tradeoff between the driving current and SCE improvement.The detailed physics is explained.