宽带隙立方氮化硼薄膜制备

报道了用偏压调制射频溅射方法制备宽带隙立方氮化硼(c-BN)薄膜的实验结果.研究了衬底负偏压对制备c-BN薄膜的影响.c-BN薄膜沉积在p型Si(100)衬底上，溅射靶为六角氮化硼（h-BN）,工作气体为Ar气和N2气混合而成，薄膜的成分由傅里叶变换红外谱标识.结果表明，在射频功率和衬底温度一定时，衬底负偏压是影响c-BN薄膜生长的重要参数.在衬底负偏压为-200V时得到了立方相含量在90%以上的c-BN薄膜.还给出了薄膜中的立方相含量随衬底负偏压的变化，并对c-BN薄膜的生长机制进行了讨论.

Deposition of Cubic Boron Nitride Thin Films with Wide Energy Gap

Cubic boron nitride(c-BN) thin films were deposited on p-type Si(100) wafers(8—15Ω*cm) by Radio Frequency (RF) sputter.The Si substrates were biased by DC voltage negatively with respect to the ground.Before deposition,the substrates were ultrasonically cleaned using a triple solvent procedure followed by a distilled water rinse.The target was the hot-pressed hexagonal boron nitride of 4N purity.The working gas was the mixture of Ar and N\-2 with pressure of (0.66—1.33Pa).The films were characterized by Fourier Transform Infrared Spectroscopy (FTIR).Under a definite substrate temperature and RF power,substrate negative DC bias was an important factor that affects the formation of c-BN.At the substrate negative DC bias of 200V,we obtained the c-BN films that contained more than 90% cubic phase.It is evident that different substrate DC bias voltages result in different cubic phase contents in the c-BN films and the relative content of c-BN in the thin films increases with the increase of substrate negative DC bias.