| Cd1-xZnxTe晶片中Zn组分的室温 显微光致发光平面扫描表征 |
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| 引用本文： | 李志锋,陆卫,蔡炜颖,黄根生,杨建荣,何力,沈学础.Cd1-xZnxTe晶片中Zn组分的室温 显微光致发光平面扫描表征[J].半导体学报,2001,11(2). |
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| 作者姓名： | 李志锋 陆卫 蔡炜颖 黄根生 杨建荣 何力 沈学础 |
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| 作者单位： | 1. 中国科学院上海技术物理研究所 红外物理国家实验室，上海 200083
2. 中国科学院上海技术物理研究所 功能材料器件中心，上海 200083 |
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| 摘 要： | 用显微光致发光（μ-PL）平面扫描的方法对CdZnTe(CZT)晶片进行了研究．分别在19μm×16μm的缺陷区域进行微米尺度和7.9mm×6.0mm的大面积范围内进行毫米尺度的逐点PL测量．对测得每一点的PL谱进行了拟合，得到测量点的禁带宽度等参数，其平面分布对应于CZT中Zn的组分分布．统计的结果给出禁带宽度的不均匀性．对样品进行溴抛光后重复类似的测量，结果表明禁带宽度的均匀性大为改善，接近了材料组分的真实分布．
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| 关 键 词： | CdZnTe 平面分布 显微光致发光 平面扫描 |
Characterization of Zn Composition in Cd1-xZnxTe by Room Temperature Micro-Photoluminescence Mapping |
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| Abstract: | The study of nominal Cd0.96Zn0.04Te (CZT) wafer bymicro-photoluminescence （μ-PL）mapping is presented.The PL mapping is performed in 19μm×16μm defect-containing area in micrometer scale and 7.9mm×6.0mm large area in millimeter scale，respectively.Each PL spectrum has been fitted theoretically,resulting in the energy band gap Eg. The maps of Eg are drawn for each measurement,with the Zn composition distributions.The statistics proves the inhomogeneity in composition,which can be interpreted in terms of surface defects and stress.After Br/methanol polishing on the wafer,two similar measurements were carried out and the results show a great improvement in Eg homogeneity and the deduced Zn composition is close to the real one.This improvement is due to the elimination of the surface defects and the induced stress.It suggests the feasibility of PL mapping in determining the Zn composition homogeneity and distribution in CZT wafer. |
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