| 退火温度对Cu膜微结构与应力的影响 |
| |
| 引用本文： | 雒向东,罗崇泰.退火温度对Cu膜微结构与应力的影响[J].桂林工学院学报,2009,29(3):327-330. |
| |
| 作者姓名： | 雒向东 罗崇泰 |
| |
| 作者单位： | 1. 中国空间技术研究院,兰州物理研究所,兰州,730000;兰州城市学院,培黎工程技术学院,兰州,730070
2. 中国空间技术研究院,兰州物理研究所,兰州,730000 |
| |
| 基金项目： | 甘肃省自然科学基金暨中青年科学基金项目 |
| |
| 摘 要： | 采用磁控溅射工艺在Si基片上沉积500 nm厚Cu膜,并在不同温度下进行快速退火处理。用X射线衍射仪、扫描电镜、光学相移方法研究薄膜的微结构与应力。结果表明：随着退火温度T增加,Cu（111）择优取向系数δCu（111）不断减小,薄膜的Cu（111）/Cu（200）取向组成比值减小;在T=773K条件下退火的薄膜形成了显著的空洞与裂纹;当T在小于673 K范围内增加时,薄膜应力由拉应力不断减小继而转变为压应力,而当T=773 K时,薄膜又呈现出较大的拉应力。
|
| 关 键 词： | 铜膜 微结构 残余应力 退火 |
Microstructure and Residual Stress of Cu Films Annealed at Different Temperatures |
| |
| LUO Xiang-dong,LUO Chong-tai.Microstructure and Residual Stress of Cu Films Annealed at Different Temperatures[J].Journal of Guilin University of Technology,2009,29(3):327-330. |
| |
| Authors: | LUO Xiang-dong LUO Chong-tai |
| |
| Affiliation: | LUO Xiang-dong1,2,LUO Chong-tai1(1.Lanzhou Physics Institute,China Academy of Space Technology,Lanzhou 730000,China,2.Peili Technical College,Lanzhou City University,Lanzhou 730070,China) |
| |
| Abstract: | 500 nm-thick Cu thin films are deposited on Si substrates by magnetron sputtering technology and then annealed under different temperatures.Film microstructure and residual stress are investigated by X-ray diffraction(XRD),scanning electron microscope(SEM),and optical phase-shift technology.The results show that with the increase of T,the intensity ratio of Cu(111)/Cu(200) decreases and the film grain size increases.When the film annealed at T=773 K,film defect such as hole and crack can be found.With T inc... |
| |
| Keywords: | Cu film microstructure residual stress annealing |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
