SiC半导体二维自旋磁极化子能量的磁场效应

在考虑声子之间相互作用和电子自旋的情况下,应用么正变换和线性组合算符法研究了电子自旋对SiC半导体弱耦合二维自旋磁极化子能量磁场效应的影响。数值计算给出了下列结果:电子自旋使自陷能分裂为二,且随磁场B增加其分裂间距增大;电子自旋能量与电子在磁场中的Landau基态能之比恒为0.23;电子自旋能量与自能之比小于电子自旋能量与自陷能之比,但非常接近,它们随B增强而近似线性增大,当B为0和10T时,它们分别为0和0.008;电子自旋能量与声子之间相互作用能量之比也随B增加而线性增大,当B为0和7.949T时,其比值分别为0和1。该结果有助于设计和研制自旋场效应晶体管,自旋发光二极管和自旋共振隧道器件等。

Magnetic Field Effects on Energy of 2-D Spin Magnetopolaron in SiC Semiconductor

Considering interaction between phonons and electron spin and using unitary transformation and linear combination operator method, studied is influence of electron spin on energy magnetic field effect of weak-coupling 2-D spin magnetopolaron in SiC. Numerical calculation is below. Electron spin splits self-trapping energy into two and the gap increases with increasing magnetic field B. The ratio of electron spin energy to Landau ground energy is always 0.23. The ratio of electron spin energy to self energy is smaller than that of electron spin energy to self-trapping energy, but both are although close. They increase almost linearly with increasing B; they are 0 at 0T and 0. 008 at 10T. The ratio of electron spin energy to interaction energy between phonons also increases linearly with increasing B; it is 0 at 0T and 1 at 7. 949T. These results could help designing and developing spin field effect transistor, spin light-emitting diode, spin resonant tunneling device and so on.