| PtTi阻挡层对AuTi／AuGe：Ni／GaAs系统热稳定性及欧姆接触特性的影响 |
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| 引用本文： | 蒋幼泉.PtTi阻挡层对AuTi／AuGe：Ni／GaAs系统热稳定性及欧姆接触特性的影响[J].固体电子学研究与进展,1994,14(1):81-84. |
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| 作者姓名： | 蒋幼泉 |
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| 作者单位： | 南京电子器件研究所 |
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| 摘 要： | 用俄歇电子能谱和电阻测试法研究了ＰｔＴｉ阻挡层与ＡｎＴｉ／ＡｕＧｅ：Ｎｉ／ＧａＡｓ系统热稳定性的影响及欧姆接触特性的退化。结果表明，系统在２５０℃以下热处理是稳定的，它具有良好的欧姆接触特性；在更高的温度下，发现阻挡层下面的Ｔｉ扩散穿过接触层并消耗接触层的ＧａＡｓ，在欧姆接触层下形成Ｔｉ－Ｇａ－Ａｓ／ＧａＡｓ接触。接触电阻Ｒｃ迅速增加，由原始的几欧增大到几百欧。在３２０℃热处理时，系统的欧姆接触消失变成整流接触特性。这是由于系统存在着非理想配比界面区而造成的。
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| 关 键 词： | 阻挡层，AuTi／AuGe：Ni／GaAs系统，热稳定性，欧姆接触，俄歇电子能谱 |
The Effect of PtTi Barrier Layer on the Thermal Stability and the Ohmic Characteristics of the AnTi/AuGe: Ni/GaAs System |
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| Jiang Youquan.The Effect of PtTi Barrier Layer on the Thermal Stability and the Ohmic Characteristics of the AnTi/AuGe: Ni/GaAs System[J].Research & Progress of Solid State Electronics,1994,14(1):81-84. |
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| Authors: | Jiang Youquan |
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| Abstract: | The effect of PtTi barrier layer on the thermal stability and the ohmiccontact characteristics of the AnTi/AuGe: Ni/GaAs system was investigated withthe help of Auger electron spectroscopy (AES) and resistance measurement. It wasfound that the system was stable and had a better ohmic contact characteristics withthe heat treatment temperature below 250℃. Ti involved in barrier layer penetrated contact layer into GaAs substrate and Ti-Ga-As/GaAs contact was formed with increasing heat treatment temperature. Contact resistance R. increased from ohms to hundreds ohms. When the heat treatment temperature rose to 320℃, the ohmic contact characteristics of the system varied and the rectifying contact occured. Nonstoichiometric interface was attributed to this change. |
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| Keywords: | Barrier Layer AnTi/AuGe: Ni/GaAs System Thermostability Ohmic Contact AES |
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