Threshold control in VCSELs by proton implanted depth |
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| Authors: | ZHAO Hong-dong SUN Mei Wang Wei Ma Lian-xi LIU Hui-li LI Wen-chao and LIU Qi |
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| Affiliation: | ZHAO Hong-dong~1,SUN Mei~1,Wang Wei~1,Ma Lian-xi~2,LIU Hui-li~1,LI Wen-chao~1,and LIU Qi~1 1.College of Information Engineering,Hebei University of Technology,Tianjin 300401,China 2.Department of Physics,Blinn College,TX 77805,USA |
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| Abstract: | The proton implantation is one of key procedures to confine the current diffusion in vertical cavity surface emitting lasers(VCSELs),in which the proton implanted depth and profile are main parameters.Threshold characteristics of VCSELs with various proton implanted depths are studied after optical,electrical and thermal fields have been simulated self-consistently in three dimensions.It is found that for VCSELs with confinement radius of 2 mm,increasing proton implanted depth can reduce the injected curren... |
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