| 磷（P31^＋）注入Si的快速退火电特性 |
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| 引用本文： | 范才有. 磷（P31^＋）注入Si的快速退火电特性[J]. 微电子学, 1990, 20(2): 93-96 |
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| 作者姓名： | 范才有 |
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| 作者单位： | 四川固体电路研究所 |
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| 摘 要： | 本文报告了P_(31)~+离子注入Si中快速退火的电特性研究结果。采用高精度四探针测量了P_(31)~+注入层在不同注入剂量下,薄层电阻与退火温度和退火时间的关系。采用自动电化学测量仪PN-4200,测量了P_(31)~+离子注入Si中的载流子剖面分布。
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| 关 键 词： | VLSI 离子注入 退火 电化学测量 |
Electrical Property of Rapid Annealing for P_(31)~+ Implanted Silicon |
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| Fan Caiyou. Electrical Property of Rapid Annealing for P_(31)~+ Implanted Silicon[J]. Microelectronics, 1990, 20(2): 93-96 |
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| Authors: | Fan Caiyou |
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| Affiliation: | Sichuan Institute of Solid-State Circuits |
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| Abstract: | Reported in this paper is an investigation of electrical property of rapid annealing for P31+ implanted silicon. Sheet resistance versus annealing time/temperature for P31+ implanted layers at different dosages were measured using high accuracy four-point probe, and carrier profiles for P31+ implanted silicon were measured with PN4200. |
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| Keywords: | Ion implantation Rapid annealing Electrochemical measurement |
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