Effects of growth interruption on the optical properties of AIGaAs/GaAs and GaAs/InGaAs quantum wells grown by atmospheric pressure organometallic chemical vapor deposition |
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| Authors: | Daniel C Bertolet Jung-Kuei Hsu Kei May Lau Emil S Koteles |
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| Affiliation: | (1) Compound Semiconductor Laboratory Department of Electrical, Computer Engineering University of Massachusetts, 01003 Amherst, MA;(2) GTE Laboratories Inc., 40 Sylvan Road, 02254 Waltham, MA;(3) Present address: United Epitaxial Technologies, 19545 N.W. Von Newmann Dr, 97006 Beaverton, OR |
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| Abstract: | In this study, the effects of growth interruptions on Al0.17Ga0.83As/GaAs and GaAs/ InxGa1-xAs quantum wells (QWs) grown by organometallic chemical vapor deposition (OMCVD) were assessed using low-temperature photoluminescence
(PL) and photoluminescence excitation (PLE) spectroscopies. Growth interruption times were varied between 60, 10, and 0 sec.
For both material systems, as the interruption time was reduced, the ground-state QW transition energies increased, while
the linewidths of the peaks decreased. For the Al0.17Ga0.83As/GaAs structures, 5 K PL data suggests that the incorporation of impurities is enhanced by longer growth interruption times.
In addition, as the interruption time was reduced, the energy separation between the 5 K PL and PLE peaks (Stokes shift) decreased,
and was as low as 2.6 meV for no interruption. For GaAs/In0.11Ga0.89As samples, 2 K PL data indicated that the incorporation of donor species was not a function of the growth interruption time. |
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| Keywords: | Quantum wells atmospheric pressure OMCVD |
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