| New Curvature-Compensated CMOS Bandgap Voltage Reference |
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| 引用本文： | Lu Shen Ning Ning Qi Yu Yan Luo Chun-Sheng Li. New Curvature-Compensated CMOS Bandgap Voltage Reference[J]. 中国电子科技, 2007, 5(4): 370-373 |
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| 作者姓名： | Lu Shen Ning Ning Qi Yu Yan Luo Chun-Sheng Li |
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| 作者单位： | School of Microelectronics ＆ Solid-State Electronics, University of Electronic Science and Technology of China （UESTC）, Chcngdu, 610054, China |
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| 摘 要： | A novel curvature-compensated CMOS bandgap voltage reference is presented. The reference utilizes two first order temperature compensations generated from the nonlinearity of the finite current gain β of vertical pnp bipolar transistor. The proposed circuit, designed in a standard 0.18 μm CMOS process, achieves a good temperature coefficient of 2.44 ppm/℃ with temperature range from --40℃ to 85 ℃, and about 4 mV supply voltage variation in the range from 1.4 V to 2.4 V. With a 1.8 V supply voltage, the power supply rejection ratio is -56dB at 10MHz.
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| 关 键 词： | 能带隙 基准电压 CMOS集成电路 曲率补偿技术 |
| 收稿时间： | 2007-08-15 |
| 修稿时间： | 2007-09-05 |
New Curvature-Compensated CMOS Bandgap Voltage Reference |
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| Lu Shen,Ning Ning,Qi Yu,Yan Luo,Chun-Sheng Li. New Curvature-Compensated CMOS Bandgap Voltage Reference[J]. Journal of Electronic Science Technology of China, 2007, 5(4): 370-373 |
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| Authors: | Lu Shen Ning Ning Qi Yu Yan Luo Chun-Sheng Li |
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| Abstract: | A novel curvaturecompensated CMOS bandgap voltage reference is presented. The reference utilizes two first order temperature compensations generated from the nonlinearity of the finite current gain β of vertical pnp bipolar transistor. The proposed circuit,designed in a standard 0.18 μm CMOS process, achieves a good temperature coefficient of 2.44 ppm/℃ with temperature range from 40 ℃ to 85 ℃, and about 4 mV supply voltage variation in the range from 1.4 V to 2.4 V. With a 1.8 V supply voltage, the power supply rejection ratio is 56 dB at 10 MHz. |
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| Keywords: | Bandgap voltage reference CMOS curvature-compensation technique finite current gain. |
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