| InGaAs／GaAs异质结构材料及器件应用 |
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| 引用本文： | 彭正夫 张允强. InGaAs／GaAs异质结构材料及器件应用[J]. 固体电子学研究与进展, 1994, 14(3): 205-208 |
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| 作者姓名： | 彭正夫 张允强 |
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| 作者单位： | 南京电子器件研究所 |
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| 摘 要： | 概述了ＩｎＧａＡｓ／ＧａＡｓ异质结构材料用于制作微波器件的优越性，叙述了材料的ＭＢＥ生长、输运特性和掺杂分布，以及用于制作Ｋｕ波段低噪声高增益ＨＦＥＴ的结果：栅长０．５μｍ，１２ＧＨｚ下噪声系数０．９３ｄＢ，相关增益９ｄＢ。
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| 关 键 词： | InGaAs／GaAs异质结构，MBE，霍尔效应，C—V分布，HFET |
InGaAs/GaAs Heterostructures and Their Applications for HFETs |
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| Peng Zhengfu,Zhang Yunqiang,Gong Chaoyang,Gao Xiang,Sun Juan,Wu Peng. InGaAs/GaAs Heterostructures and Their Applications for HFETs[J]. Research & Progress of Solid State Electronics, 1994, 14(3): 205-208 |
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| Authors: | Peng Zhengfu Zhang Yunqiang Gong Chaoyang Gao Xiang Sun Juan Wu Peng |
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| Abstract: | This paper outlines the advantages of InGaAs/GaAs heterostructure transistors over GaAs MESFETs or HEMTs,and describes MBE growth technology,Hall effect and electrochemical C-V profiles.We have successfully developed low-noise highgain HFETs using InGaAs/GaAs heterostructure.The 0. 5 μm gate length HFETs with 0.93 dB noise figure and 9 dB associated gain at 12 GHz have been obtained. |
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| Keywords: | InGaAs/GaAs Heterostructure MBE Hall Effect C-V Profile HFETs |
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