硅基双介质集成同轴传输结构

针对硅基系统级封装技术的发展需求,以及硅基板上传统的信号传输结构传输损耗大、抗串扰能力差等问题,提出一种新型的硅基双介质集成同轴传输结构。 该结构基于体硅微加工工艺设计而成,具有全封闭式的外导体以及单晶硅和空气两种介质。由于结构的复杂性,提出等效矩形同轴传输结构设计方法来简化设计流程,并用有限元仿真验证了此设计方法的有效性。 将双介质集成同轴传输结构与硅基板上的若干传统传输结构的性能进行仿真对比,结果表明该新型传输结构具有更低的插入损耗及更好的抗串扰性能。最后,制备了双介质集成同轴结构和相应的硅基带状线实物样品并进行了测试对比,测试结果与仿真结果保持一致并较好地验证了仿真分析的结论。

Si-Based Dual-Dielectric Integrated Coaxial Transmission Structure

As development of Si-based system-in-package technology, and traditional Si-based signal transmission structures having the disadvantages of high transmission loss and bad anti-interference performance, a novel Si-based dual-dielectric integrated coaxial transmission structure is presented in this article. This structure is based on bulk-Si micro-manufacture technology. It has fully shielded outer conductor and two materials (both silicon and air) as dielectrics. Due to the complexity of this structure, an equivalent rectangular coaxial transmission structure is created in order to simplify the design process of the structure. And finite element simulation is used to validate the accuracy of this equivalent design method. Transmission performances of dual-dielectric integrated coaxial transmission structure and several traditional transmission structures are analyzed and compared. The results indicate that the new type of transmission structure has lower insertion loss and better anti-interference performance. Finally, specimens of dual-dielectric integrated coaxial transmission structure and Si-based strip line are fabricated and tested. The test results are in accordance with the simulations and verify the results very well.