n+ -GaAs/undoped GaAlAs/undoped GaAs field-effect transistor |
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| Authors: | Matsumoto K Ogura M Wada T Hashizume N Yao T Hayashi Y |
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| Affiliation: | Electrotechnical Laboratory, Tsukuba, Japan; |
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| Abstract: | The first self aligned accumulation-mode GaAs MIS-like FET having an n+ -GaAs/undoped GaAlAs/undoped GaAs structure is reported. The FETs fabricated show the threshold voltage of almost zero (V?th = 0.035 V) and very uniform (?Vth = 0.013 V) characteristics, as expected. The transconductance is as high as 170 mS/mm, which is the highest value ever reported on GaAs MIS-like FETs. |
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