Conduction power loss in MOSFET synchronous rectifier withparallel-connected Schottky barrier diode |
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| Authors: | Yamashita N Murakami N Yachi T |
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| Affiliation: | NTT Integrated Inf. & Energy Syst. Lab., Nippon Telegraph & Telephone Corp., Tokyo; |
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| Abstract: | The conduction power loss in an MOSFET synchronous rectifier with a parallel-connected Schottky barrier diode (SBD) was investigated. It was found that the parasitic inductance between the MOSFET and SBD has a large effect on the conduction power loss. This parasitic inductance creates a current that is shared by the two devices for a certain period and increases the conduction power loss. If conventional devices are used for under 1 MHz switching, the advantage of the low on-resistance MOSFET will almost be lost. To reduce the conduction loss for 10 MHz switching, the parasitic inductance must be a subnanohenley |
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