Conduction power loss in MOSFET synchronous rectifier withparallel-connected Schottky barrier diode |
| |
| Authors: | Yamashita N. Murakami N. Yachi T. |
| |
| Affiliation: | NTT Integrated Inf. & Energy Syst. Lab., Nippon Telegraph & Telephone Corp., Tokyo; |
| |
| Abstract: | The conduction power loss in an MOSFET synchronous rectifier with a parallel-connected Schottky barrier diode (SBD) was investigated. It was found that the parasitic inductance between the MOSFET and SBD has a large effect on the conduction power loss. This parasitic inductance creates a current that is shared by the two devices for a certain period and increases the conduction power loss. If conventional devices are used for under 1 MHz switching, the advantage of the low on-resistance MOSFET will almost be lost. To reduce the conduction loss for 10 MHz switching, the parasitic inductance must be a subnanohenley |
| |
| Keywords: | |
|
|
