Structural and electrical measurements of CdZnSe composite

TheI—Vcharacterization and the electrical resistivity of selenium rich Se₈₅Cd_15-xZn_x (x = 0, 3, 7, 11 and 15) system at room temperature have been studied. Samples were obtained using melt cooling technique. So prepared samples were then characterized in terms of their crystal structure and lattice parameter using X-ray diffraction method. The materials were found to be poly crystalline in nature, having zinc blend structure over the whole range of zinc concentration. The measurements ofI—V bdcharacteristics have been carried out at different temperatures from room to 140°C. The electrical resistivity of the samples with composition at room temperature has been found to vary between maximum 2.7 x 10⁸ Ωm and minimum 7.3 x 10⁵ Ωm and shows a maximum at 3 at. wt.% of Zn. The carrier activation energy of the samples with composition has also been determined and found to vary from 0.026 eV to 0.111 eV.