Interface characteristics of <span class="math"><math><mtext>GaAs</mtext><mtext>Al</mtext><msub><mi></mi><mn>x</mn></msub><mtext>Ga</mtext><msub><mi></mi><mn>1−x</mn></msub></math></span> As superlattices grown by MOCVD期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Interface characteristics of $GaAs Al_{x} Ga_{1−x}$ As superlattices grown by MOCVD

Authors:	S.J. Jeng C.M. Wayman J.J. Coleman G. Costrini

Affiliation:	Department of Metallurgy and Mining Engineering and Materials Research Laboratory, University of Illinois, Urbana, IL 61801, USA;Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois, Urbana, IL 61801, USA

Abstract:	The structure and quality of the heterointerfaces of $AlAs GaAs$ semiconductor superlattices grown by the MOCVD technique have been examined on the atomic scale using high-resolution electron microscopy lattice imaging. The interface of either GaAs grown on AlAs (Al_xGa_1?xAs) or AlAs (Al_xGa_1?xAs) grown on GaAs is atomically smooth and without defects in both cases, and the interface quality is not degraded by increasing either the layer size or the Al composition.

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