Measurement by cathodoluminescence spectroscopy of epitaxial layer compositions in (Al,Ga)As double heterostructures |
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| Authors: | C.A. Gaw V. Swaminathan |
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| Affiliation: | AT&T Bell Laboratories, Reading, PA 19604, USA;AT&T Bell Laboratories, Murray Hill, NJ 07974, USA |
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| Abstract: | Cathodoluminescence spectroscopy has been perfected as an accurate technique for measuring the alloy composition of (Al,Ga)As epitaxial layers in complex optoelectronic devices to within ±0.2% AlAs. The cross section of a complex device structure can be imaged and then the cathodoluminescence spectra of individual submicron layers can be analyzed. |
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