| 沟道应力对纳米尺度MOSFET器件特性的影响 |
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| 引用本文： | 吴涛,杜刚,刘晓彦,康晋锋,韩汝琦.沟道应力对纳米尺度MOSFET器件特性的影响[J].半导体学报,2006,27(13):415-418. |
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| 作者姓名： | 吴涛 杜刚 刘晓彦 康晋锋 韩汝琦 |
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| 作者单位： | 北京大学微电子学系，北京 100871;北京大学微电子学系，北京 100871;北京大学微电子学系，北京 100871;北京大学微电子学系，北京 100871;北京大学微电子学系，北京 100871 |
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| 摘 要： | 利用ISE DESSIS器件模拟工具，模拟了纳米尺度的MOSFETs器件沟道中存在应力时的器件特性，分析了应力大小和方向发生变化对MOSFET的阈值电压、亚阈特性等器件特性的影响.
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| 关 键 词： | MOSFET 应力 深亚微米 形变势垒模型 |
Characteristics of Nanometer MOSFETs with Mechanical Strain in the Channel |
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| Wu Tao,Du Gang,Liu Xiaoyan,Kang Jinfeng and Han Ruqi.Characteristics of Nanometer MOSFETs with Mechanical Strain in the Channel[J].Chinese Journal of Semiconductors,2006,27(13):415-418. |
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| Authors: | Wu Tao Du Gang Liu Xiaoyan Kang Jinfeng and Han Ruqi |
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| Affiliation: | Department of Microelectronics,Peking University,Beijing 100871,China;Department of Microelectronics,Peking University,Beijing 100871,China;Department of Microelectronics,Peking University,Beijing 100871,China;Department of Microelectronics,Peking University,Beijing 100871,China;Department of Microelectronics,Peking University,Beijing 100871,China |
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| Abstract: | The characteristics of typical nanometer p- and n-channel strained Si MOSFETs with mechanical stress applied in the channel are simulated by a commercial device simulator ISE. The impacts of the direction and magnitude of the stress on the device performances such as threshold voltage and sub-threshold characteristics are investigated. |
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| Keywords: | MOSFETs strain stress deformation potential theory |
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