| IGBT工作特性的理论分析 |
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| 引用本文： | 李恩玲,周如培.IGBT工作特性的理论分析[J].半导体杂志,1998,23(4):17-21. |
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| 作者姓名： | 李恩玲 周如培 |
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| 作者单位： | 西安理工大学 |
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| 摘 要： | 对绝缘栅双极晶体管（ＧＢＴ）的工作特性进行了理论分析。由于ＩＧＢＴ所含的ＰＮＰ晶体管是宽基区、低增益的，因此在分析其工作特性进用了双极传输理论。在分析瞬态特性进用准静态近似（ＮＱＳ），精确地描述了ＩＧＢＴ的瞬态特性。
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| 关 键 词： | 绝缘栅 双极晶体管 IGBT 非准静态近似 |
The Analysis of The Characteristics of IGBT |
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| Authors: | Li Enling Zhou Rupei |
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| Abstract: | An analysis of the characteristics of IGBT is made in this paper A wide base,low gain PNP,transistor is contained in IGBT,so the ambipolar transport theory is used to analyse the characteristics of IGBT. While discussing transient characteristic of IGBT,non quasi static analysis is used and the transient characteristic of IGBT is described accurately. |
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| Keywords: | Insulated gate bipolar transistor Ambipolar transport theory Non quasi state approximation |
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