Integration technology for ferroelectric memory devices

Ferroelectric devices have been developed for future memory devices due to their ideal memory properties such as non-volatility, fast access time, and low power consumption. Several integration issues for commercial ferroelectric devices have been overcome or are being resolved by novel process technology and design technology. The process technology is combined with ferroelectric material technology, electrode technology, etching technology, hydrogen barrier technology, barrier and plug technology, and backend technology. The advanced process technologies are enhanced by developing its own design technology. In recent few years, low density ferroelectric random access memory (FRAM) products start to gradually but progressively penetrate into memory and smart card market, and the ferroelectric devices are developed to 32 Mb FRAM with 0.25 μm design rule and triple metallization. In this paper, it is reviewed how to integrate the ferroelectric devices for producing commercial products.