K-band monolithic InGaP-InGaAs DCFET amplifier using BCB coplanar waveguide technology |
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| Authors: | Hsien-Chin Chiu Shih-Cheng Yang Cheng-Kuo Lin Ming-Jyh Hwu Chiou HK Yi-Jen Chan |
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| Affiliation: | Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan; |
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| Abstract: | A K-band (20 GHz) monolithic amplifier was developed and fabricated by adopting a low-/spl kappa/ benzocyclobutene (BCB) coplanar waveguide (CPW) line and InGaP-InGaAs doped-channel HFETs (DCFETs). This monolithic microwave integrated circuit (MMIC) utilizes a high impedance BCB CPW microstrip line (Z/sub 0/=70 /spl Omega/) for the biasing circuits, and a Z/sub 0/=50 /spl Omega/ line for the RF signal transmission. The low dielectric constant characteristic of the BCB interlayer is beneficial for a common-ground bridge process, which reduces the parasitics. The calculated loss tan/spl delta/ is 0.036 for the BCB at 20 GHz. The one-stage MMIC amplifier achieves an S/sub 21/ of 5 dB at 20 GHz, which is the first demonstration of the K-band InGaP-InGaAs DCFET monolithic circuit. |
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