| 高性能的增强型AlGaN/GaN HEMT |
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| 引用本文： | 冯志红,谢圣银,周瑞,尹甲运,周伟,蔡树军. 高性能的增强型AlGaN/GaN HEMT[J]. 半导体学报, 2010, 31(8): 084001-3 |
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| 作者姓名： | 冯志红 谢圣银 周瑞 尹甲运 周伟 蔡树军 |
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| 摘 要： | 采用氟离子处理的方法实现了阈值电压0.35V的增强型AlGaN/GaN HEMT 器件。该器件展示了高性能直流特性，最大饱和电流 667mA/mm，器件的峰值跨导达到203ms/mm。 1μm栅长电流增益截止频率和最大振荡截止频率分别为10.3GHz和12.5GHz，并且小信号特性在器件氟离子处理后并没有出现衰退。最后，采用SIMS的实验结果辅助进行了数值仿真，对氟离子在势垒层中起受主缺陷的理论给出了合理的解释。
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| 关 键 词： | AlGaN/GaN 高电子迁移率晶体管；氟基等离子；阈值电压；数值仿真 |
| 收稿时间： | 2010-03-04 |
| 修稿时间： | 2010-03-30 |
A high-performance enhancement-mode AlGaN/GaN HEMT |
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| Feng Zhihong,Xie Shengyin,Zhou Rui,Yin Jiayun,Zhou Wei and Cai Shujun. A high-performance enhancement-mode AlGaN/GaN HEMT[J]. Chinese Journal of Semiconductors, 2010, 31(8): 084001-3 |
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| Authors: | Feng Zhihong Xie Shengyin Zhou Rui Yin Jiayun Zhou Wei Cai Shujun |
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| Affiliation: | National Key Laboratory of Application Specific Integrated Circuit, Shijiazhuang 050051, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;National Key Laboratory of Application Specific Integrated Circuit, Shijiazhuang 050051, China;National Key Laboratory of Application Specific Integrated Circuit, Shijiazhuang 050051, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;National Key Laboratory of Application Specific Integrated Circuit, Shijiazhuang 050051, China |
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| Abstract: | |
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| Keywords: | enhancement-mode AlGaN/GaN HEMT fluorine plasma threshold voltage numerical simulation oindent |
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