Photoluminesence studies of CdTe/SnO<sub>2</sub> and CdTe/CdS heterojunctions: The influence of oxygen and the CdCl<sub>2</sub> heat treatment期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Photoluminesence studies of CdTe/SnO₂ and CdTe/CdS heterojunctions: The influence of oxygen and the CdCl₂ heat treatment

Authors:	Sergiu Vatavu Hehong Zhao Iuliana CaramanChris Ferekides

Affiliation:	^a Faculty of Physics, Moldova State University, 60 A. Mateevici str., Chisinau, MD 2009, Republic of Moldova ^b Electrical Engineering Department, University of South Florida, Mail Point: ENB118, 4202 East Fowler Ave., Tampa, FL 33620, USA ^c Engineering Department, University of Bacau, 157 Calea Marasesti, 600115 Bacau, Romania ^d Surya Power Inc., 2001 Gateway Place, 150W, San Jose, CA, 95110, USA

Abstract:	The influence of oxygen and annealing in the presence of CdCl₂ on the photoluminescence (PL) spectra of CdTe, component of SnO₂/CdTe heterojunction (HJ), has been studied in a temperature range of 17-100 K. The changes in the photoluminescence spectra were studied as a function of excitation intensity. Analysis of the PL spectra was carried out with considerations of spectra obtained from CdS/CdTe heterojunctions. CdTe side PL (SnO₂/CdTe HJ) consisted of 1.450 eV-DA defect band and 1.243 eV band (17 K). Annealing resulted in the disappearance of 1.243 eV band in oxygen containing samples. Interface PL for the unannealed samples consisted of mainly the 1.264 eV and a trace of the defect band. The CdCl₂ treatment is responsible for an almost symmetrical 1.416 eV band.

Keywords:	CdS CdTe Heterojunction Oxygen Photoluminescence (PL)
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