|
|||||
|
|
A comparative study of the physical properties of CdS, Bi2S3 and composite CdS–Bi2S3 thin films for photosensor application |
|
| Authors: | R.R. N.G. Y.G. A.A. S.D. D.M. Ramphal |
| Affiliation: | aThin Film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004, MS, India bUGC-DAE Consortium for Scientific Research Centre Facilities, University Campus, Khandwa Road, Indore 452017, MP, India |
| Abstract: | Thin films of CdS, Bi2S3 and composite CdS–Bi2S3 have been deposited using modified chemical bath deposition (M-CBD) technique. The various preparative parameters were optimized to obtain good quality thin films. The as-deposited films of CdS, Bi2S3 and composite were annealed in Ar gas at 573 K for 1 h. A comparative study was made for as-deposited and annealed CdS, Bi2S3 and composite thin films. Annealing showed no change in crystal structure of these as-deposited films. However, an enhancement in grain size was observed by AFM studies. In addition change in band gap with annealing was seen. A study of spectral response, photosensitivity showed that the films can be used as a photosensor. |
| Keywords: | Cadmium sulphide Bismuth sulphide Composite thin films Photosensitivity Spectral response |
| 本文献已被 ScienceDirect 等数据库收录！ | |