| GaAsHBT直接耦合微波单片集成电路 |
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| 引用本文： | 曾庆明,徐晓春,刘伟吉,李献杰,敖金平,王全树,郭建魁,赵永林,揭俊锋. GaAsHBT直接耦合微波单片集成电路[J]. 功能材料与器件学报, 2000, 6(3): 201-204 |
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| 作者姓名： | 曾庆明 徐晓春 刘伟吉 李献杰 敖金平 王全树 郭建魁 赵永林 揭俊锋 |
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| 作者单位： | 信息产业部电子第十三研究所专用集成电路国家重点实验室,石家庄050051 |
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| 摘 要： | 叙述了基于ＧａＡｓ ＨＢＴ的直接耦合级联形式，设计制造的几种微波单片集成电路，包括２．５Ｇｂ／ｓ跨阻放大器、３ＧＨｚ可级联放大器和１０Ｇｂ／ｓ跨阻放大器的设计、制造和测试结果。
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| 关 键 词： | GaAs HBT 微波单片集成电路 直接耦合 |
| 修稿时间： | : |
Design and performance of GaAs HBTs monolithic microwave amplifier |
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| ZENG Qing-ming,XU Xiao-chun,LIU Wei-ji,LI Xian-jie,AO Jin-ping,WANG Quan-shu,GUO Jian-Kui,ZHAO Yong-Lin,JIE Jun-feng. Design and performance of GaAs HBTs monolithic microwave amplifier[J]. Journal of Functional Materials and Devices, 2000, 6(3): 201-204 |
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| Authors: | ZENG Qing-ming XU Xiao-chun LIU Wei-ji LI Xian-jie AO Jin-ping WANG Quan-shu GUO Jian-Kui ZHAO Yong-Lin JIE Jun-feng |
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| Abstract: | The design,fabrication and performance of direct coupled AlGaAs HBTs monolithic microwave amplifiers were described, which involved 3GHz cascadable amplifier, 2.5Gb/s and 10Gb/s transimpedance amplifier. |
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| Keywords: | GaAs HBT MMIC |
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