| 外延层剥离技术(ELO)制备GaAs薄膜太阳电池 |
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| 引用本文： | 许军,刘海港,王帅,高伟,孙强.外延层剥离技术(ELO)制备GaAs薄膜太阳电池[J].电源技术,2008,32(1):33-34. |
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| 作者姓名： | 许军 刘海港 王帅 高伟 孙强 |
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| 作者单位： | 中国电子科技集团公司,第十八研究所,天津,300381 |
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| 摘 要： | 通过外延层剥离技术获得GaAs薄膜太阳电池样品,实验对比了正向和反向外延结构方法,解释了现有技术条件下,采用新颖的反向外延结构制备GaAs薄膜太阳电池的原因。对样品进行了光电转换性能测试,并对实验结果进行了讨论。
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| 关 键 词： | MOCVD技术 外延层剥离技术 掩模工艺 |
| 文章编号： | 1002-087X(2008)01-0033-02 |
| 修稿时间： | 2007年7月20日 |
GaAs thin film solar cells prepared by epitaxial lift-off |
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| XU Jun,LIU Hai-gang,WANG Shuai,GAO Wei,SUN Qiang.GaAs thin film solar cells prepared by epitaxial lift-off[J].Chinese Journal of Power Sources,2008,32(1):33-34. |
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| Authors: | XU Jun LIU Hai-gang WANG Shuai GAO Wei SUN Qiang |
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| Abstract: | The sample of GaAs thin film solar cell was prepared by epitaxial lift-off. Two epi-layer structures, one is front the other is reverse, were compared. The reason of adopting novel reverse epi-layer structure to get GaAs thin film solar cells under the present technology condition was explained. Finally, the photoelectricity performance of the sample was measured and some discussions on the result were given. |
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| Keywords: | MOCVD technology epitaxial lift-off mask technique |
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