High-frequency noise in AlGaN/GaN HFETs |
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| Authors: | Nuttinck S. Gebara E. Laskar J. Harris M. |
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| Affiliation: | Yamacraw Design Center, Georgia Inst. of Technol., Atlanta, GA, USA; |
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| Abstract: | We present in this letter the benefits of GaN-based electronic devices for low-noise MMICs. A temperature-dependent two-temperature noise model for AlGaN/GaN HFETs is implemented on a wide range of bias conditions. This study enables to access the device high-frequency noise parameters, and allow a comparison of the noise performances with SiC and GaAs technologies. |
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