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| Electron Mobility in Tris（8—Hydroxyquinolinolato）Aluminum Thin Film Based on Silicium^①② | |
| 作者姓名： | CHEN Baijun LIU Shiyong ZHANG Tieqiao FEI Haosheng |
| 作者单位： | CHEN Baijun:State Key Lab. on Integrated Optoelectronics, Jilin University Region, Changchun 130023, CHN LIU Shiyong:State Key Lab. on Integrated Optoelectronics, Jilin University Region, Changchun 130023, CHN ZHANG Tieqiao:Depart. of Physics, Jilin University, CHN FEI Haosheng:Depart. of Physics, Jilin University, CHN |
| 基金项目： | Supported by the Nation Natural Science Foundation of China. |
| 摘 要： | |
| 关 键 词： | 电子迁移率 有机半导体 铝薄片 |
| 收稿时间： | 1996/9/27 |
Electron Mobility in Tris(8-Hydroxyquinolinolato) Aluminum Thin Film Based on Silicium |
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| CHEN Baijun,LIU Shiyong,ZHANG Tieqiao,FEI Haosheng.Electron Mobility in Tris(8-Hydroxyquinolinolato) Aluminum Thin Film Based on Silicium[J].Semiconductor Photonics and Technology,1997,3(2):144-148. | |
| Abstract: | We have measured the mobilities of electrons in thin,vapor-deposited films of tris(8-hydroxyquinolinolato) aluminum(Alq 3) based on silicium using a time-of-flight(TOF) technique.The drift of electron mobility is strongly electric field and temperature dependent.At room temperature and an electric field of 2×10 5 V·cm -1 ,the effective mobility of electron is 1.0×10 -5 cm 2·V -1 ·s -1 for 200 nm thick sample. |
| Keywords: | Mobility Organic Semiconductor Time of Flight |