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Gallium-induced deep level in Pb1?x GexTe alloys |
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| Authors: | E P Skipetrov E A Zvereva V V Belousov L A Skipetrova E I Slyn’ko |
| Affiliation: | (1) Department of Physics, Moscow State University, Vorob’evy gory, Moscow, 119899, Russia;(2) Institute of Materials Science Problems, Ukrainian National Academy of Sciences, Chernovtsy, 274001, Ukraine |
| Abstract: | Galvanomagnetic properties of gallium-doped Pb1?x GexTe (0.04≤x≤0.08) alloys were studied. It is shown that gallium doping induces a deep impurity level in the alloy band gap; the energy position of this level depends on the germanium content in the alloy. A model assuming that doping with gallium results in the emergence of two defect levels in the energy spectrum of the alloys is proposed. |
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