A new compact circuit-level model of semiconductor lasers: investigation of relative intensity noise and frequency noise spectra

We introduce a new compact noise equivalent circuit model of semiconductor lasers (SLs) from the rate equation including Langevin noise sources. The noise sources are described in terms of the spectral properties of the relative intensity noise (RIN) and frequency/phase noise (FN). Unlike the previous noise equivalent circuit models, which are based on two different DC and small-signal circuit models, using only a single circuit model, the static and dynamic responses and also the noise characteristics of SLs, can be investigated. We examine the validity of the presented noise circuit model by comparing the simulated results with the analytical and numerical results available in the literatures.