Pulsed breakdown of 4H-SiC Schottky diodes terminated with a boron-implanted p-n junction

Pulsed reverse current-voltage characteristics have been measured in the breakdown region for 1-kV 4H-SiC Schottky diodes terminated with a boron-implanted p-n junction. It was shown that the dynamic breakdown voltage of the diodes increases as the pulses become shorter. Owing to the homogeneous avalanche formation at the edge of the guard p-n junction and to the high differential resistance in the breakdown region, the diodes sustain without degradation a pulsed reverse voltage substantially exceeding the static breakdown threshold. Characteristic features of the pulsed breakdown are considered in relation to the specific properties of the boron-implanted guard p-n junction.