Poly(methylsilane)—A High Ceramic Yield Precursor to Silicon Carbide |
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Authors: | Zhi-Fan Zhang Florence Babonneau Richard M. Laine Ying Mu John F. Harrod Jeffrey A. Rahn |
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Affiliation: | Department of Material Science and Engineering, University of Washington, Seattle, Washington 98195;Laboratoire Chimie de la Matiere Condensée, Universitéde Pierre et Marie Curie, Paris, France;Department of Chemistry, McGill University, Montreal, Canada |
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Abstract: | Preceramic polymers offer exceptional potential for low-temperature processing of both oxide and non-oxide ceramics. In addition, shapes such as fibers, films, and membranes that are not commonly available using standard processing techniques are readity available using preceramic polymers. In non-oxide ceramics, the ceramic products generally available from preceramics do not exhibit all of the typical properties associated with the same materials produced by standard, high-temperature processing approaches. In part, this appears to be because there are very few preceramic polymers that lead to high-purity, single-phase materials. Poly(methylsilane), (–[MeHSi] x –), produced from MeSiH3, can be used to produce relatively pure, bulk SiC at temperatures below 1000°C. The transformation process from polymer to ceramic is followed by 29Si NMR and diffuse reflectance IR. The polymer first undergoes a major rearrangement from poly(silane) to poly(carbosilane) at 400°C. Above 400°C, the resulting poly(carbosilane) decomposes to a hydrogenated form of SiC as shown by spectroscopic analysis of the 600°C material. Further heating, to 1000°C for 1 h, provides very narrow 29Si peaks indicative of β-SiC mixed with small amounts of α-SiC polytypes. Chemical analysis, when coupled with the 29Si and XRD results, suggests that poly(methylsilane) produces resonably pure, nanocrystalline SiC at temperatures much lower than previously observed for other SiC preceramic polymers. |
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Keywords: | precursors silicon carbide polysilanes nuclear magnetic resonance low temperature |
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