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反应磁控溅射MgO薄膜溅射模式的分形维表征
引用本文:汪渊,徐可为. 反应磁控溅射MgO薄膜溅射模式的分形维表征[J]. 金属学报, 2003, 39(10): 1051-1054
作者姓名:汪渊  徐可为
作者单位:1. 西安交通大学金属材料强度国家重点实验室,西安,710049;兰州铁道学院机械与动力学院,兰州,730070
2. 西安交通大学金属材料强度国家重点实验室,西安,710049
基金项目:国家自然科学基金重点资助项目5993101O,国家教育部骨干教师计划资助
摘    要:用反应磁控溅射的方法制备了MgO薄膜,基于原子力显微镜观测,并借助Fourier变换,计算了薄膜表面形貌的分形维数。发现分形维数变化对应于薄膜溅射模式的变化,二者之间有相关性,氧分压30%的分形维数是一个临界点,分形维数若发生明显跌落,意味着溅射模式发生变化,界于临界值两侧的分形维数,分别对应两种截然不同的溅射模式,与临界值对应的溅射状态则处于金属模式和氧化物模式的混和状态。

关 键 词:反应溅射 MgO薄膜 分形维 溅射模式
文章编号:0412-1961(2003)10-1051-04
修稿时间:2002-11-28

SPUTTERING MODE TRANSITION OF MgO THIN FILM CHARACTERIZED BY SURFACE FRACTAL
WANG Yuan,XU KeweiState Key Laboratory for Mechanical Behavior of Materials,Xi'an Jiaotong University,Xi'an. SPUTTERING MODE TRANSITION OF MgO THIN FILM CHARACTERIZED BY SURFACE FRACTAL[J]. Acta Metallurgica Sinica, 2003, 39(10): 1051-1054
Authors:WANG Yuan  XU KeweiState Key Laboratory for Mechanical Behavior of Materials  Xi'an Jiaotong University  Xi'an
Affiliation:WANG Yuan,XU KeweiState Key Laboratory for Mechanical Behavior of Materials,Xi'an Jiaotong University,Xi'an 710049Department of Mechanical Engineering,Lanzhou Railway Institute,Lanzhou 730070
Abstract:MgO thin films were prepared by reactive magnetron sputtering with Mg as a target and O2 as reactive gas, and characterized by atomic force microscopy (AFM). The method of Fourier transformation was used to calculate the fractal dimension of AFM images. The relationship between fractal dimension and sputtering mode was explored. The results show that the calculated fractal dimension Dfc of the film prepared at oxygen partial pressure of 30% is a critical value, corresponding to transition of sputtering mode. The sputtering modes are closely related to metallic and oxide modes respectively when their fractal dimension values are far beyond critical Dfc.
Keywords:reactive magnetron sputtering   MgO film   fractal dimension   sputtering mode
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