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Interface-induced negative differential resistance and memristive behavior in Gr/MoSe2 heterostructure
Authors:Bastani  Parnia  Mohseni  Seyed Majid  Jamilpanah   Loghman  Azizi   Behnam  Gharehbagh   Javad Shoa e
Affiliation:1.Department of Physics, Shahid Beheshti University, Evin, 19839, Tehran, Iran
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Abstract:Journal of Materials Science: Materials in Electronics - Heterostructures of materials can possess the prominent characteristics of their individual layers or gain newly emerged interface effects...
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