Layered mixed-anion compounds: Epitaxial growth,active function exploration,and device application |
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| Authors: | Hidenori Hiramatsu Yoichi Kamihara Hiroshi Yanagi Kazushige Ueda Toshio Kamiya Masahiro Hirano Hideo Hosono |
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| Affiliation: | 1. Exploratory Research for Advanced Technology–Solution-Orientated Research for Science and Technology (ERATO–SORST), Japan Science and Technology Agency (JST) in Frontier Research Center, Tokyo Institute of Technology, Mail-box S2-13, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan;2. Materials and Structures Laboratory, Tokyo Institute of Technology, Mail-box R3-1, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan;3. Department of Materials Science, Faculty of Engineering, Kyushu Institute of Technology, 1-1 Sensui-cho, Tobata-ku, Kitakyushu 804-8550, Japan;4. Frontier Research Center, Tokyo Institute of Technology, Mail-box S2-13, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan;1. Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada T6G 2G2;2. Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900, People''s Republic of China;3. Centre for Oil Sands Sustainability, Northern Alberta Institute of Technology, Edmonton, Alberta, Canada T6N 1E5;1. State Key Lab of Superhard Materials, Jilin University, Changchun 130012, China;2. School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China;3. Shanghai Entry-Exit Inspection & Quarantine Bureau, Shanghai 200135, China;4. College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China;1. Cultivating Base for Key Laboratory of Environment-Friendly Inorganic Materials in Henan Province, School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000, China;2. School of Mathematics and Informatics, Henan Polytechnic University, Jiaozuo 454000, China;3. School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China;4. School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China;1. Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang, 621900, People’s Republic of China;2. Key Laboratory of Science and Technology on High Energy Laser, China Academy of Engineering Physics, Mianyang, 621900, People’s Republic of China;3. Center for Crystal Research and Development, Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, People’s Republic of China;4. Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2, Canada;1. School of Materials Science and Engineering, Shanghai University, Shanghai, 200072, PR China;2. Department of Physics, Jinggangshan University, Ji''an 343009, PR China;3. Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, Ministry of Education, Guilin University of Technology, Guilin 541004, PR China;1. Center for Green Fusion Technology and Department of Engineering in Energy & Applied Chemistry, Silla University, Busan 617-736, Republic of Korea;2. Center for Materials Architecturing, Institute of Multidisciplinary Convergence of Materials, Korea Institute of Science and Technology, Seoul 130-650, Republic of Korea |
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| Abstract: | Optoelectronic properties and device applications of layered mixed-anion compounds such as oxychalcogenide LaCuOCh (Ch = chalcogen) and oxypnictide LaTMOPn (TM = 3d transition metal, Pn = pnicogen) are reviewed. Several distinctive functions have been found in these materials based on our original material exploration concept. Fabrication of high-quality epitaxial films of LaCuOCh leads to clarifying the excellent electrical and optical properties such as high hole mobility of 8 cm2/(V s) and heavy hole doping at >1021 cm?3 in LaCuOSe, and sharp and tunable-wavelength photoluminescence in the solid–solution systems in LaCuOCh. In addition, a room temperature operation of a light-emitting diode is demonstrated using LaCuOSe as a light-emitting layer. These results suggest that the layered oxychalcogenides have potential for light-emitting layers as well as transparent hole-injection layers in organic/inorganic light-emitting diodes. Furthermore, by extending the material system from the copper-based oxychalcogenides to isostructural compounds, transition metal-based oxypnictides LaTMOP (TM = Fe, Ni), we have found novel superconductors, LaFeOP and LaNiOP. |
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