Low temperature firing of BiSbO4 microwave dielectric ceramic with B2O3–CuO addition |
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| Authors: | D Zhou Hong Wang Li-Xia Pang Xi Yao Xin-Guang Wu |
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| Affiliation: | 1. Departamento de Física y Química Teórica, Facultad de Química, Universidad Nacional Autónoma de México, Ciudad Universitaria, México D. F. 04510, Mexico;2. Departamento de Física, Facultad de Ciencias, Universidad Nacional Autónoma de México, Ciudad Universitaria, México D. F. 04510, Mexico;3. Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Ciudad Universitaria, México D. F. 04510, Mexico;1. State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, PR China;2. Jiangsu Key Laboratory of Advanced Structural Materials and Application Technology, Nanjing Institute of Technology, Nanjing 211167, PR China;1. Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02-668 Warsaw, Poland;2. Department of Physics, Ben-Gurion University of the Negev, P.O. Box 653, 84105 Beer-Sheva, Israel;3. Department of Physics, Northern Illinois University, DeKalb, IL 60115, USA |
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| Abstract: | The influence of B2O3–CuO addition on the sintering behavior, phase composition, microstructure and microwave dielectric properties of BiSbO4 ceramic have been investigated. The BiSbO4 ceramics can be well densified to approach above 95% theoretical density in the sintering temperature range from 840 to 960 °C as the addition amount of B2O3–CuO increases from 0.6 to 1.2 wt.%. Sintered ceramic samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The microwave permittivity ?r saturated at 19–20 and Qf values varied between 33,000 and 46,000 GHz while temperature coefficient of resonant frequency shifting between ?70 and ?60 ppm/°C at sintering temperature around 930 °C. Lowering sintering temperature of BiSbO4 ceramics makes it possible for application in low temperature co-fired ceramic technology. |
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