Dip-coated La2Ti2O7 as a buffer layer for growth of Bi3.25La0.75Ti3O12 films with enhanced (0 1 1) orientation |
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| Authors: | Chia-Erh Liu Mireille Richard-Plouet Marie-Paule Besland David Albertini Claude Estournès Luc Brohan |
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| Affiliation: | 1. Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex, France;2. Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France;3. CIRIMAT, UMR 5085 CNRS - UPS–INP, 118 route de Narbonne, 31062 Toulouse Cedex, France;1. School of Materials Science and Engineering, University of Jinan, Jinan 250022, China;2. Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, China;1. Laboratory of Dielectric Functional Materials, School of Physics & Material Science, Anhui University, Hefei, 230601, PR China;2. Center of Modern Experimental Technology, Anhui University, Hefei, 230039, PR China;1. National Key Laboratory of Shock Wave and Detonation Physics, Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang 621900, China;2. Electronic Materials Research Laboratory, Xi’an Jiaotong University, Xi’an 710049, China;3. Advanced Materials Research Group, Department of Mechanical, Materials and Manufacturing Engineering, University of Nottingham, University Park, Nottingham NG7 2RD, United Kingdom;1. School of Materials Science and Engineering, North Minzu University, Yinchuan 750021, China;2. School of Materials Science and Engineering, University of New South Wales, NSW 2052, Australia;3. School of Civil Engineering and Hydraulic Engineering, Ningxia University, Yinchuan 750021, China;1. Univ Paris Est Creteil, LACL, F-94010 Creteil, France;2. Fachbereich 4 – Abteilung Informatikwissenschaften, CIRT, Universität Trier, D-54286 Trier, Germany;3. School of Computer Science and Engineering, VIT, Vellore, 632 014, India |
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| Abstract: | Thin-films of La2Ti2O7 were obtained by dip-coating process using a precursor salt in nitric acid solution. The effects of solution concentration, withdrawal speed, post-annealing duration and temperature were investigated both on grain size and orientation of the La2Ti2O7 thin layers. In addition, a target with the required stoichiometry for PVD deposition of La-substituted Bi4Ti3O12 (BLT) was successfully sintered by spark plasma sintering (SPS) at 750 °C. Finally (0 1 1)-oriented BLT ferroelectric films have been grown by RF sputtering on (1 1 0)-oriented La2Ti2O7 polycrystalline thin-film. A preferential orientation of BLT thin films has been obtained after annealing at a temperature lower than 650 °C. |
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