Processing and properties of 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 thick films |
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| Authors: | Danjela Kuščer Miha Skalar Janez Holc Marija Kosec |
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| Affiliation: | 1. Department of Mechanical and Materials Engineering, Florida International University, Miami, FL 33174, USA;2. Center for the Study of Matter at Extreme Conditions (CeSMEC), Florida International University, Miami, FL 33199, USA;3. Navy Undersea Warfare Center, 1176 Howell St., Newport, RI 02841, USA;1. Department of Physics, Nano Functional Material Technology Centre and Material Science Research Centre, Indian Institute of Technology Madras, Chennai 600036, India;2. Department of Physics, Sacred Heart College (Autonomous), Kochi 682013, India;1. Condensed Matter Science and Technology Institute & School of Science, Harbin Institute of Technology, Harbin 150080, China;2. State Key Laboratory of New Ceramic and Fine Processing & School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;3. National Laboratory of Solid State Microstructures & Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China;4. Department of Mathematics & Materials Research Institute, The Pennsylvania State University, University Park, PA 16802, USA;1. Jozef Stefan Institute, Jamova cesta 39, 1000 Ljubljana, Slovenia;2. Jozef Stefan International Postgraduate School, Jamova cesta 39, 1000 Ljubljana, Slovenia |
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| Abstract: | We have investigated the processing of 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 (PMN–PT) thick films on platinised alumina substrates. Nanosized PMN–PT powder with 2 mol% of excess PbO was prepared by high-energy milling and deposited on the substrate using screen-printing technology. The films were then sintered at 950 °C in a PbO-rich atmosphere. The influence of the sintering time and the amount of PbO-containing packing powder was studied and related to the structural, microstructural, dielectric and piezoelectric properties of the film. In order to obtain a homogeneous and dense thick film without any secondary phase, the PMN–PT films had to be sintered in the presence of a PbO-based liquid phase that had to be completely removed from the thick film during the final stage of the sintering. Under optimal sintering conditions we obtained a room temperature relative dielectric permittivity of 3600, dielectric losses of 0.036, a Tm of 174 °C, a permittivity at the Tm of 21,000 and a d33 of 140 pC/N. |
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