| GaAs/AlGaAs多量子阱结构中的电子干涉 |
| |
| 引用本文： | 程兴奎,黄柏标,徐现刚,任红文,刘士文,蒋民华.GaAs/AlGaAs多量子阱结构中的电子干涉[J].电子学报,2001,29(5):692-694. |
| |
| 作者姓名： | 程兴奎 黄柏标 徐现刚 任红文 刘士文 蒋民华 |
| |
| 作者单位： | 1. 山东大学光电材料与器件研究所,济南 250100;2. 山东大学晶体材料所,济南 250100 |
| |
| 基金项目： | 国家自然科学基金，山东省自然科学基金，69976016，Y98G11107，， |
| |
| 摘 要： | 由电子波干涉的观点出发,理论分析指出:多量子阱结构势垒以上的电子存在一些分立的弱干涉非定域态.通过红外光激发,量子阱中基态电子可以跃迁到这些态上形成一些吸收峰.理论计算出的吸收峰位置与实验测量到的结果相当一致,并且理论估计的吸收峰强弱也与实验结果一致.
|
| 关 键 词： | GaAs 多量子阱 电子干涉 |
| 文章编号： | 0372-2112 (2001) 05-0692-03 |
| 收稿时间： | 2000-04-05 |
Interference of Electron in GaAs/AlGaAs Multiquantum Well Structure |
| |
| CHENG Xing-kui,HUANG Bo-biao,XU Xian-gang,REN Hong-wen,LIU Shi-wen,JIANG Min-hua.Interference of Electron in GaAs/AlGaAs Multiquantum Well Structure[J].Acta Electronica Sinica,2001,29(5):692-694. |
| |
| Authors: | CHENG Xing-kui HUANG Bo-biao XU Xian-gang REN Hong-wen LIU Shi-wen JIANG Min-hua |
| |
| Affiliation: | 1. Institute of Optoelectronic Materials and Devices,Shandong University,Jinan 250100,China;2. Institute of Crystal Materials,Shandong University,Jinan 250100,China |
| |
| Abstract: | On the basis of theory of electron interference,it is pointed out that there are a series of separate weak interference non-localized state above barrier for multiquantum well (MQW) structure.When photoexcitation occurs,the electrons on ground state in quantum well can be excited to the weak interference non-locaized state above barrier forming absorption peak.The calculated positions of absorption peak are in good agreement with experimental results and estimated strength of several absorption peaks is in agreement with experimental results. |
| |
| Keywords: | GaAs |
| 本文献已被 维普 万方数据 等数据库收录！ |
| 点击此处可从《电子学报》浏览原始摘要信息 |
|
点击此处可从《电子学报》下载全文 |
|
