Amorphous chromium silicide formation in hydrogenated amorphous silicon |
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Authors: | A. Kovsarian J. M. Shannon |
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Affiliation: | (1) School of Electronic Engineering, Information Technology and Mathematics, University of Surrey, GU2 5XH Guildford, Surrey, United Kingdom |
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Abstract: | The interaction between thin films of hydrogenated amorphous silicon and sputter-deposited chromium has been studied. Following deposition of the chromium films at room temperature, the films were annealed over a range of times and temperatures below 350°C. It was found that an amorphous silicide was formed only a few nanometers thick with the square of thickness proportional to the annealing time. The activation energy for the process was 0.55±0.05 eV. The formation process of the silicide was very reproducible with the value of density derived from the thickness and Cr surface density being close to the value for crystalline CrSi2 for all films formed at temperatures ≤300°C. The specific resistivity of the amorphous CrSi2 was ≈600 μΩ·cm and independent of annealing temperature. |
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Keywords: | Amorphous chromium silicide amorphous thin films hydrogenated amorphous silicon silicide growth |
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