Dielectric characteristics of sintered silicon nitride materials

We have studied and summarized data on structure formation and dielectric characteristics of Si₃N₄-based materials obtained by hot pressing and activated sintering. We have measured the dielectric characteristics in the frequency range 1 kHz to 10 MHz. We have established that the level of the dielectric characteristics of the materials is significantly affected by the content of highly dispersed Si₃N₄ powder obtained by plasmochemical synthesis in the original mix. Translated from Poroshkovaya Metallurgiya, Nos. 3–4(412), pp. 22–26, March–April, 2000.