Dielectric characteristics of sintered silicon nitride materials |
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Authors: | V. Y. Petrovskii L. A. Shipilova |
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Affiliation: | (1) Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Kiev |
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Abstract: | We have studied and summarized data on structure formation and dielectric characteristics of Si3N4-based materials obtained by hot pressing and activated sintering. We have measured the dielectric characteristics in the frequency range 1 kHz to 10 MHz. We have established that the level of the dielectric characteristics of the materials is significantly affected by the content of highly dispersed Si3N4 powder obtained by plasmochemical synthesis in the original mix. Translated from Poroshkovaya Metallurgiya, Nos. 3–4(412), pp. 22–26, March–April, 2000. |
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Keywords: | ceramic activated sintering dielectric characteristics microstructure |
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