| 700V高压LDMOS器件瞬态失效机理研究 |
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| 引用本文： | 崔其晖,刘斯扬,钱钦松,孙伟锋,苏巍,张森,何乃龙.700V高压LDMOS器件瞬态失效机理研究[J].固体电子学研究与进展,2012,32(4):330-335. |
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| 作者姓名： | 崔其晖 刘斯扬 钱钦松 孙伟锋 苏巍 张森 何乃龙 |
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| 作者单位： | 1. 东南大学国家专用集成电路系统工程技术研究中心,南京,210096
2. 华润上华科技有限公司,江苏,无锡,214028 |
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| 基金项目： | 江苏省自然科学基金支持项目 |
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| 摘 要： | 详细分析了700V横向双扩散金属氧化物半导体(LDMOS)器件瞬态失效机理的特性。研究表明触发器件寄生晶体管开启的失效功率不仅与器件内部温度有关,同时也与电场分布有关。器件温度影响寄生阱电阻和衬底电流的大小,而电场分布影响器件内部碰撞电离。器件温度与电场分布均与栅脉冲参数有密切关系。为了阐述栅脉冲参数对器件温度的影响,模拟仿真了器件的热响应曲线。
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| 关 键 词： | 横向双扩散金属氧化物半导体器件 瞬态失效机理 温度 |
Analysis of Transient Failure Mechanisms of 700 V LDMOS Transistor |
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| CUI Qihui
,
LIU Siyang
,
QIAN Qinsong
,
SUN Weifeng
,
SU Wei
,
ZHANG Sen
,
HE Nailong.Analysis of Transient Failure Mechanisms of 700 V LDMOS Transistor[J].Research & Progress of Solid State Electronics,2012,32(4):330-335. |
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| Authors: | CUI Qihui LIU Siyang QIAN Qinsong SUN Weifeng SU Wei ZHANG Sen HE Nailong |
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| Affiliation: | 1National ASIC System Engineering Center,Southeast University,Nanjing,210096,CHN)(2CSMC Technologies Corporation,Wuxi,Jiangsu,214028,CHN) |
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| Abstract: | The characterizations of transient failure mechanisms of 700 V LDMOS transistor are investigated in detail.It is shown that the critical power level to trigger the intrinsic transistor is not only related to the devices temperature which would lead the p-well resistance and leak current to rise but also related to the electrical field,both being affected by the gate pulse parameters.In addition,the time-dependent temperature rise and decay is simulated in order to explain how the pulse parameters work. |
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| Keywords: | LDMOS transient failure mechanisms temperature |
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