| Ka波段5W GaAs PHMET功率MMIC |
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| 引用本文： | 陶洪琪,张斌,林罡. Ka波段5W GaAs PHMET功率MMIC[J]. 固体电子学研究与进展, 2012, 32(4) |
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| 作者姓名： | 陶洪琪 张斌 林罡 |
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| 作者单位： | 南京电子器件研究所,微波毫米波单片集成和模块电路重点实验室,南京,210096 |
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| 摘 要： | 报道了一款采用0.15μm GaAs功率MMIC工艺研制的Ka波段功率放大器芯片。芯片采用四级放大拓扑结构,在29～32GHz频带范围内6V工作条件下线性增益25dB,线性增益平坦度小于±0.75dB;饱和输出功率大于5W,饱和效率大于20%,功率增益大于22dB;1dB压缩点输出功率大于36.5dBm,效率大于18%。
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| 关 键 词： | 砷化镓功率放大器 Ka波段 微波单片集成电路 |
5 W Ka-band GaAs PHEMT Power Amplifier MMIC |
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| TAO Hongqi , ZHANG Bin , LIN Gang. 5 W Ka-band GaAs PHEMT Power Amplifier MMIC[J]. Research & Progress of Solid State Electronics, 2012, 32(4) |
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| Authors: | TAO Hongqi ZHANG Bin LIN Gang |
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| Abstract: | The design and performance of power amplifiers developed using a 0.15 μm GaAs process for Ka-band applications is presented.A four-stage amplifier demonstrates 25 dB small signal gain and ±0.75 dB gain flatness from 29 GHz to 32 GHz.The power MMIC delivers a saturated output power of more than 5 W and a PAE of more than 20% with over 22 dB power gain across 29 GHz to 32 GHz at a drain bias of 6 V.The power MMIC provides an output power of 36.5 dBm with a PAE of 18% at 1 dB compression point. |
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| Keywords: | GaAs power amplifier Ka band MMIC |
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