A 150-V multiple up-drain VDMOS, CMOS, and bipolar process in`direct-bonded' silicon on insulator on silicon |
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Authors: | Ifstrom T Apel U Graf H-G Harendt C Hofflinger B |
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Affiliation: | Inst. fuer Mikroelektronik Stuttgart; |
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Abstract: | Silicon on insulator on silicon (SOIS) has been produced with silicon direct bonding (SDB). Within a silicon film of 15-μm thickness, islands with ubiquitous oxide isolation have been formed for the simultaneous integration of 150-V power VDMOS transistors, CMOS circuits in a channelless sea-of-gates array with 2-μm gates, and bipolar transistors. The up-drain VDMOS transistors with 2-Ω-mm 2 specific on-resistance allow multiple isolated outputs, so high-voltage push-pull drivers can be fabricated in a single chip. The bipolar transistors are comparable to those of a 60-V standard process with vertical n-p-n and lateral p-n-p current gains of 80 |
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