The effect of nitrogen on the passivation mechanisms and electronic properties of chromium oxide layers |
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Authors: | O Lavigne C Alemany-Dumont B Normand MH Berger C Duhamel P Delichére |
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Affiliation: | aUniversité de Lyon, INSA-Lyon, MATEIS, CNRS UMR 5510, LyonTech Campus, F-69621 Villeurbanne Cedex, France;bMINES ParisTech, Centre des Matériaux, CNRS UMR 7633, BP 87, 91003 Evry Cedex, France;cUniversité de Lyon, CNRS UMR 5256, IRCELYON, 2 Avenue Albert Einstein, F-69626 Villeurbanne Cedex, France |
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Abstract: | In this work, several Physical Vapour Deposition (PVD) films of chromium and chromium nitride were grown by adjusting the nitrogen flow rate. It was found that films containing lower nitrogen content exhibited better corrosion behaviour in relation to their microstructure. Moreover, the resistivities of the samples were found to increase with N content due to a decrease in the number of metallic bonds in the coatings and a loss of oxide layer conductivity. The latter is linked to a decrease of charge carrier density by the incorporation of species into the passive layers, which decreases cation vacancy density. |
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Keywords: | B EIS B Polarization B TEM B XPS C Passivity |
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