Fast etching of copper in thionyl chloride/acetonitrile solutions |
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| Authors: | Wei Lin C.P. Wong |
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| Affiliation: | aSchool of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Dr. NW, Atlanta, GA 30332, United States;bDepartment of Electronic Engineering, College of Engineering, The Chinese University of Hong Kong, China |
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| Abstract: | We report fast etching of copper (Cu) in thionyl chloride (SOCl2)/acetonitrile (CH3CN) solutions. The etching rate can be tuned over a wide range by varying the concentration of the etchant, and the stirring rate of the liquid. The etching rate reaches 36 mg min−1 cm−2 in 1 mol L−1 SOCl2/CH3CN under stirring at room temperature, which is much faster than any currently used etchant for Cu. With sonication, the etching rate reaches 320 mg min−1 cm−2. The chemical reactions involved are studied by X-ray photoelectron spectroscopy and Raman spectroscopy. The fast etching may find important applications in microelectronics. |
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| Keywords: | A. Copper B. XPS B. Raman spectroscopy C. Acid corrosion |
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