| 非掺杂LEC-InAs单晶的残留杂质与电学性能研究 |
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| 引用本文： | 胡炜杰,赵有文,孙文荣,段满龙,董志远,杨俊. 非掺杂LEC-InAs单晶的残留杂质与电学性能研究[J]. 半导体学报, 2010, 31(4): 042001-4 |
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| 作者姓名： | 胡炜杰 赵有文 孙文荣 段满龙 董志远 杨俊 |
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| 作者单位： | Institute;Semiconductors;Chinese;Academy;Sciences; |
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| 摘 要： | 有关非掺InAs单晶中的施主杂质、缺陷及其产生规律的尚不清楚。本文利用辉光放电质谱（GDMS）定量分析了LEC法生长的InAs单晶的残留杂质，结合Hall测量、Raman散射和红外吸收等研究了施主杂质的来源和缺陷对材料性质的影响。
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| 关 键 词： | 晶状体上皮细胞 砷化铟 电学特性 单晶 杂质 辉光放电质谱 残留 掺杂 |
| 收稿时间： | 2009-09-10 |
Residual impurities and electrical properties of undoped LEC InAs single crystals |
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| Hu Weijie,Zhao Youwen,Sun Wenrong,Duan Manlong,Dong Zhiyuan and Yang Jun. Residual impurities and electrical properties of undoped LEC InAs single crystals[J]. Chinese Journal of Semiconductors, 2010, 31(4): 042001-4 |
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| Authors: | Hu Weijie Zhao Youwen Sun Wenrong Duan Manlong Dong Zhiyuan Yang Jun |
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| Affiliation: | Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | Impurities and their influence on the properties of InAs single crystals have been studied by combining the results of glow discharge mass spectrometry (GDMS), Hall measurements, Raman scattering and infrared absorption. The results indicate that carbon is a major impurity in LEC-InAs single crystals and exhibits a significant influence on the electrical and optical properties. |
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| Keywords: | InAs single crystal impurity defect |
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